CED05P03/CEU05P03
P-Channel Enhancement Mode Field Effect
Transistor FEATURES
-30V, -15A, RDS(ON) = 70mΩ @VGS = -10V.
RDS(ON) = 120mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30
Units V V A A W W/ C C
±20
-15 -45 42 0.
29 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operatin...