N-Channel Enhancement Mode Field Effect
Transistor FEATURES
100V, 13.
3A, RDS(ON) = 115mΩ @VGS = 10V.
RDS(ON) = 125mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
G
G D
CED16N10L/CEU16N10L
PRELIMINARY
D
D G S CEU SERIES TO-252(D-PAK)
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100
Units V V A A W W/ C C
±20
13.
3 53 43 0.
34 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above ...