N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 25A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED25N15L/CEU25N15L D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-25...
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