N-Channel Enhancement Mode Field Effect
Transistor FEATURES
100V, 37A, RDS(ON) = 32mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED40N10/CEU40N10
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 100
Units V V A A W W/ C C
±20
37 148 93.
8 0.
75 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
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