|
Part Number
|
ISL9N315AD3ST |
|
Manufacturer
|
Fairchild Semiconductor |
|
Description
|
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
|
Published
|
Mar 29, 2011 |
|
Detailed Description
|
ISL9N315AD3 / ISL9N315AD3ST
February 2003
ISL9N315AD3 / ISL9N315AD3ST
N-Channel Logic Level PWM Optimized UltraFET® Tr...
|
|
Datasheet
|
ISL9N315AD3ST
|
Overview
ISL9N315AD3 / ISL9N315AD3ST
February 2003
ISL9N315AD3 / ISL9N315AD3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Formerly developmental type 83337
Features
• Fast switching • rDS(ON) = 0.
012Ω (Typ), VGS = 10V • rDS(ON) = 0.
022Ω (Typ), VGS = 4.
5V • Qg (Typ) = 18nC, VGS = 5V • Qgd (Typ) = 3.
4nC • CISS (Typ) = 900pF
Applications
• DC/DC converters
DRAIN (FLANGE)
DRAIN ...
Similar Datasheet