PROCESS
Power
Transistor
CP219
NPN - High Current
Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,670 PRINCIPAL DEVICE TYPES 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428 2N5429 2N5430 D44H11 CJD44H11 BACKSIDE COLLECTOR EPITAXIAL PLANAR 83 x 83 MILS 11 MILS 13.
2 x 19.
7 MILS 13.
2 x 21.
2 MILS Al - 30,000Å Au - 12,000Å
R3 (22-March 2010)
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PROCESS
CP219
Typical Electrical Characteristics
R3 (22-March 2010)
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c e n t r a l s e m i .
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