PROCESS
Small Signal
Transistors
CP341V
NPN - Low VCE(SAT)
Transistor Chip
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 54,330 PRINCIPAL DEVICE TYPES CMLT3410 CMPT3410 CMST3410 CMUT3410 CXT3410 EPITAXIAL PLANAR 18 x 18 MILS 7.
1 MILS 3.
8 x 3.
8 MILS 3.
8 x 3.
8 MILS Al/Si - 30,000Å Au - 12,000Å
R2 (22-March 2010)
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PROCESS
CP341V
Typical Electrical Characteristics
R2 (22-March 2010)
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