Ordering number : ENA1000 MCH3475 SANYO Semiconductors DATA SHEET MCH3475 Features • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Ultrahigh-speed switching.
4V drive.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.
8mm) Conditions Ratings 30 ±20 1.
8 7.
2 0.
8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Dr...

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