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HN4G01J

Part Number HN4G01J
Manufacturer Toshiba Semiconductor
Description Audio Frequency General Purpose Amplifier Applications
Published Apr 14, 2011
Detailed Description HN4G01J TOSHIBA Multi Chip Discrece Device HN4G01J Audio Frequency General Purpose Amplifier Applications Q1 z z z z Sm...
Datasheet HN4G01J





Overview
HN4G01J TOSHIBA Multi Chip Discrece Device HN4G01J Audio Frequency General Purpose Amplifier Applications Q1 z z z z Small package (Dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.
1mA) / hFE (IC = 2mA) = 0.
95 (typ.
) Unit: mm Q2 z Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
Q1 : 2SC4837F Q2 : RN1103F Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC...






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