Ordering number:EN2508B
NPN Triple Diffused Planar Silicon
Transistor
2SC3995
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ).
· High reliability (adoption of HVP process).
· High breakdown voltage (VCBO=1500V).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC3995]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL
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