PD - 97480
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRG7PH42UD1PbF IRG7PH42UD1-EP
VCES = 1200V I NOMINAL = 30A
Features
• • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package
C
G E
TJ(max) = 150°C
n-channel
C
VCE(on) typ.
= 1.
7V
Benefits
• Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF • Rugged transient ...