DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.
2Ω IS = 0 VDSS ID25 RDS(on) Maximum Ratings 200 200 ±20 ±30 25 150 25 20 5 200 590 V V V V A A A mJ V/ns GATE = = = = 200 V 25 A 0.
13 Ω 590 W PDC DRAIN V/ns W W W C/W C/W SG1 SG2 SD1 SD2 PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 1.
9W/°C above 25°C Tc = 25°C 28...

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