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13N50


Part Number 13N50
Manufacturer Unisonic Technologies
Title N-CHANNEL POWER MOSFET
Description 1 TO-220 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and p...
Features * RDS(ON) =0.48Ω @VGS = 10 V * Ultra low gate charge (typical 43 nC ) * Low reverse transfer Capacitance ( CRSS = typical 20pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness 1 TO-220F1 „ SYMBOL „ ORDERING INFORMATION Ordering Number Lead F...

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13N50C : These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TM Features • • • • • • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 43nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " .

13N50CF : This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D GDS TO-220F G MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Parameter Drain to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed Gate to Sour.

13N50DM2 : This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STD13N50DM2AG Product summary Order code STD13N50DM2AG Marking 13N50DM2 Package DPAK Packing Tape and reel DS12210 - Rev 4 - October 2019 For further information contact your local STMicroelectronics sales office. www.st.com STD13N50DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltag.

13N50H : The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as high efficiency switched mode power supplies, active power factor correction,electronic lamp ballasts based on half bridge topology 2. Features „ RDS(on)=0.48Ω @ VGS=10V „ Low gate charge ( typical 43nC) „ Fast switching capability „ Avalanche energy specified „ Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 5 Function Gate Drain Source Drain KIA SEMICONDUCTORS 13Amps,500V N-CHANNEL MOSFET 13N50H 4. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage Drain current continuous Drain current p.

13N50K : The UTC 13N50K is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse under the avalanche and commutation mode conditions. The UTC 13N50K is ideally suitable for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge topology.  FEATURES * RDS(ON) 0.48Ω @VGS = 10V * Ultra low gate charge (typical 39nC ) * Low reverse transfer Capacitance ( CRSS = typical 20pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 1 .




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