Part Number
|
IXFL39N90 |
Manufacturer
|
IXYS Corporation |
Description
|
HiPerFET Power MOSFETs ISOPLUS264 |
Published
|
May 13, 2011 |
Detailed Description
|
HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM
(Electrically Isolated Backside) Single Die MOSFET
N-Channel ...
|
Datasheet
|
IXFL39N90
|
Overview
HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM
(Electrically Isolated Backside) Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 900 900 ± 20 ± 30 34 154 39 64 4 5 580 -40 .
.
.
+150 150 -40 .
.
.
+150 2500 3000 8 V V V V A A A mJ J V/ns W °C °C °C V~ V~ g Features...
Similar Datasheet