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Part Number
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IXFL44N100P |
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Manufacturer
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IXYS Corporation |
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Description
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Polar Power MOSFET HiPerFET |
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Published
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May 13, 2011 |
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Datasheet
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IXFL44N100P
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Features
G = Gate S = Source D = Drain
G S D
• Silicon chip on Direct-Copper-Bond
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•
•
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substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(30pF) Rugged polysilicon gate cell structur...
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