Part Number
|
IXFN300N10P |
Manufacturer
|
IXYS Corporation |
Description
|
Polar Power MOSFET HiPerFET |
Published
|
May 13, 2011 |
Detailed Description
|
Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intri...
|
Datasheet
|
IXFN300N10P
|
Overview
Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.
6mm (0.
062 in.
) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA
net
IXFN300N10P
VDSS ID25
RDS(on) trr
= = ≤ ≤
100V 295A 5.
5mΩ 200ns
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 100 100 ±20 ± 30 295 100 900 100 3 20 1070 -55 .
.
.
+175 175 -55 .
.
.
+175 300 2500 3000 1.
5/13...
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