PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.
6mm (0.
062 in.
) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.
DataSheet4U.
net IXFN30N110P VDSS ID25 RDS(on) trr = = ≤ ≤ 1100V 25A 360mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 Maximum Ratings 1100 1100 ± 30 ± 40 25 75 15 1.
5 20 695 -55 .
.
.
+150 150 -55 .
.
.
+150 300 2500 3000 1.
5/13 1.
3/11.
5 30 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g Features • International standard package • Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ = 25°C to 150°C TJ = 25°C to 1...

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