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Part Number
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IXFN32N80P |
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Manufacturer
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IXYS Corporation |
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Description
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PolarHV HiPerFET Power MOSFET |
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Published
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May 13, 2011 |
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Detailed Description
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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN32N80P
VDSS ID25
R...
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Datasheet
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IXFN32N80P
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Overview
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN32N80P
VDSS ID25
RDS(on) trr
= 800 V = 25 A ≤ 270 mΩ ≤ 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL
www.
DataSheet4U.
net
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 800 800 ±30 ±40 29 250 30 100 5 10 625 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D G = Gate S = Source D = ...
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