HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC= 25°C TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFN 39N90 VDSS ID25 RDS(on) = = = 900 V 39 A 0.
22 Ω D trr ≤ 250 ns G S S Maximum Ratings 900 900 ± 20 ± 30 39 154 39 64 4 5 700 -55 .
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+150 150 -55 .
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+150 2500 3000 V V V V A A A mJ J V/ns W °C °C °C V~ V~ G = Gate S = Source D = ...

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