Part Number
|
IXFN40N110P |
Manufacturer
|
IXYS Corporation |
Description
|
Polar Power MOSFET HiPerFET |
Published
|
May 13, 2011 |
Detailed Description
|
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VG...
|
Datasheet
|
IXFN40N110P
|
Overview
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.
6mm (0.
062 in.
) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA
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DataSheet4U.
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IXFN40N110P
VDSS ID25
RDS(on) trr
= = ≤ ≤
1100V 34A 260mΩ 300ns
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1100 1100 ± 30 ± 40 34 100 20 2 20 890 -55 .
.
.
+150 150 -55 .
.
.
+150 300 2500 3000 1.
5/13 1.
3/11.
5 30 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in...
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