Part Number
|
IXFN48N55 |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
May 13, 2011 |
Detailed Description
|
Advanced Technical Information
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, H...
|
Datasheet
|
IXFN48N55
|
Overview
Advanced Technical Information
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TJ VISOL Md Weight 1.
6 mm (0.
63 in) from case for 10 s 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C
IXFN 48N55
VDSS = ID25 = RDS(on) =
trr £ 250 ns
550 V 48 A 110 mW
D
G S
S
Maximum Ratings 550 550 ±20 ±30 48 192 44 60 3 5 600 -55 .
.
.
+150 150 -55 .
.
...
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