Part Number
|
IXFP180N10T2 |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
May 13, 2011 |
Detailed Description
|
TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFA180N10T2 IXF...
|
Datasheet
|
IXFP180N10T2
|
Overview
TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFA180N10T2 IXFP180N10T2
Symbol
VDSS VDGR
VGSS VGSM
ID25 IL(RMS) IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL TSOLD FC Md Weight
Test Conditions
TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M
Continuous Transient
Maximum Ratings
100
V
100
V
20
V
30
V
TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS,TJ 175C
TC = 25C
180 120 450
90 750
15
480
-55 .
.
.
+175 175
-55 .
.
.
+175
A A A
A mJ
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.
6 mm (0.
062in.
) from Case for ...
Similar Datasheet