3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
¾ Advanced termination scheme to provide enhanced voltageblocking capability.
¾ Avalanche Energy Specified ¾ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ¾ The chips may packaged in TO-251-3Ltype and the typical equivalent product is 1N60.
¾ The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
¾ Die size: 1.
96mm*1.
78mm.
¾ Chip Thickness: 300±20μm.
CHIP TOPOGRAPHY 1-Gate PAD 3-Source PAD 1 3 ¾ Top met...

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