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Part Number
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IXFR20N120P |
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Manufacturer
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IXYS Corporation |
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Description
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Polar Power MOSFET HiPerFET |
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Published
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May 23, 2011 |
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Detailed Description
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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VG...
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Datasheet
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IXFR20N120P
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Overview
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC
net
IXFR20N120P
VDSS ID25
RDS(on) trr
= = ≤ ≤
1200V 13A 630mΩ 300ns
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1200 1200 ± 30 ± 40 13 50 10 1 15 290 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A J V/ns W °C °C °C °C °C V~ N/lb.
g
ISOPLUS247 (IXFR) E153432
Isolated Tab
G = Gate S = Source
D
= Drain
Features
• Silicon chip o...
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