|
Part Number
|
IXFZ520N075T2 |
|
Manufacturer
|
IXYS Corporation |
|
Description
|
TrenchT2 GigaMOS HiperFET Power MOSFET |
|
Published
|
May 23, 2011 |
|
Detailed Description
|
Advance Technical Information
TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET
(Electrically Isolated Tab) N-Channel Enhanc...
|
|
Datasheet
|
IXFZ520N075T2
|
Overview
Advance Technical Information
TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET
(Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg VISOL TL TSOLD VISOL FC Weight
www.
DataSheet4U.
net
IXFZ520N075T2
VDSS ID25
= =
RDS(on) ≤
75V 465A 1.
3mΩ
DE475
D
D
D
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
Maximum Ratings 75 75 ±20 ±30 465 1560 200 3 600 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A J W °C °C °C V~ V~ °C °C V~ N/lb.
g
G S S
Isolated Tab
G = Gate S = Source
D = Drain
F...
Similar Datasheet