Preliminary Technical Information PolarVHVTM HiPerFET IXFB30N120P Power MOSFET N-Channel Enhancement Mode VDSS = 1200 V ID25 = 30 A RDS(on) ≤ 350 mΩ ≤ 300 ns trr Symbol VDSS VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 1 Ω TC = 25°C Maximum Ratings 1200 ±30 ±40 30 75 10 60 3 15 1250 -55 .
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+150 150 -55 .
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+150 V V V A A A mJ J V/ns PLUS264TM (IXFB) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features W °C °C °C °C °C N/lb g z z z Fast recovery diode Uncl...

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