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IXFH150N17T

Part Number IXFH150N17T
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 30, 2011
Detailed Description TrenchHVTM Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFH150N17T VDSS ID25 RDS(on) = 175V =...
Datasheet IXFH150N17T




Overview
TrenchHVTM Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFH150N17T VDSS ID25 RDS(on) = 175V = 150A ≤ 12mΩ TO-247 Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 175 175 ± 30 150 75 400 75 1.
5 15 830 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.
in.
g Advantages z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z International standard package Avala...






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