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Part Number
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IXFT16N120P |
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Manufacturer
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IXYS Corporation |
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Description
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Power MOSFET |
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Published
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May 30, 2011 |
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Detailed Description
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PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VG...
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Datasheet
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IXFT16N120P
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Overview
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
IXFH16N120P IXFT16N120P
VDSS ID25
RDS(on) trr
= 1200V = 16A ≤ 950mΩ ≤ 300ns
TO-247 (IXFH) Maximum Ratings 1200 1200 ± 30 ± 40 16 35 8 800 15 660 -55 .
.
.
+150 150 -55 .
.
.
+150 Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 300 260 1.
13 / 10 6 5 V V V V A A A mJ V/ns W...
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