Part Number
|
IXFT20N100P |
Manufacturer
|
IXYS Corporation |
Description
|
Polar Power MOSFET HiPerFET |
Published
|
May 30, 2011 |
Detailed Description
|
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VG...
|
Datasheet
|
IXFT20N100P
|
Overview
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
IXFH20N100P IXFT20N100P
VDSS ID25
RDS(on) trr
= = ≤ ≤
1000V 20A 570mΩ 300ns
Maximum Ratings 1000 1000 ± 30 ± 40 20 50 10 800 15 660 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.
in.
g g
TO-247 (IXFH)
TAB
TO-268 (IXFT)
G
S
TAB
G = Gate S = Source
D = Drain TAB = Drain
Maximum lea...
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