HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances IXFH 20N60Q IXFT 20N60Q VDSS ID25 RDS(on) = = = 600 V 20 A 0.
35 Ω trr ≤ 250ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 20 80 20 30 1.
5 15 300 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ J V/ns TO-247 AD (IXFH) (TAB) TO-268 (IXFT) Case Style G (TAB) S D...

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