PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 24N80P IXFK 24N80P IXFT 24N80P VDSS = 800 V ID25 = 24 A RDS(on) ≤ 400 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 24 55 12 50 1.
5 10 650 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ J TO-247 (IXFH) G D S D (TAB) TO-268 (IXFT) Case Style G V/ns W °C °C °C S D (TAB...

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