Part Number
|
IXFK20N120 |
Manufacturer
|
IXYS Corporation |
Description
|
HiPerFET Power MOSFETs |
Published
|
May 30, 2011 |
Detailed Description
|
Advanced Technical Information
HiPerFETTM Power MOSFETs
IXFK 20N120 IXFX 20N120
VDSS ID25
RDS(on)
= 1200 V = 20 A =...
|
Datasheet
|
IXFK20N120
|
Overview
Advanced Technical Information
HiPerFETTM Power MOSFETs
IXFK 20N120 IXFX 20N120
VDSS ID25
RDS(on)
= 1200 V = 20 A = 0.
75 Ω
trr ≤ 300 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 1200 1200 ± 30 ± 40 20 80 10 40 2 5 780 -55 .
.
.
+150 150 -55 .
.
.
+150 300 0.
9/6 V V V V A A A mJ J V/ns W °C °C °C °C Nm/lb.
in.
6 10 g g
PLUS 247TM (IXFX)
G
D
D (TAB) S
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate S = Source
D = Drain TA...
Similar Datasheet