PROCESS
Small Signal
Transistor
CP591V
PNP - Amp/Switch
Transistor Chip
com
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 30,475 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A
BACKSIDE COLLECTOR R1
EPITAXIAL PLANAR 19 x 19 MILS 7.
1 MILS 3.
5 x 4.
3 MILS 3.
5 x 4.
5 MILS Al - 30,000Å Au - 18,000Å
R3 (22-March 2010)
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PROCESS
CP591V
Typical Electrical Characteristics
R3 (22-March 2010)
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