PROCESS
Power
Transistor
CP611
PNP - Amp/Switch
Transistor Chip
com
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,300 PRINCIPAL DEVICE TYPES CJD42C TIP42C EPITAXIAL PLANAR 80 x 99 MILS 12.
5 ± 1 MILS 12 x 32 MILS 13 x 46 MILS Al - 30,000Å Ag - 16,000Å
BACKSIDE COLLECTOR
R5 (22-March 2010)
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PROCESS
CP611
Typical Electrical Characteristics
R5 (22-March 2010)
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