PROCESS
CPD48V
Schottky Diode
High Current
Schottky Diode Chip
com
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 13.
8 x 13.
8 MILS 7.
1 MILS 9.
0 x 9.
0 MILS Al - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 89,720 PRINCIPAL DEVICE TYPES CMPSH-3 Series CMSSH-3 Series CMXSH-3 CMKSH-3T
BACKSIDE CATHODE
R3 (22-March 2010)
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PROCESS
CPD48V
Typical Electrical Characteristics
R3 (22-March 2010)
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