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BSC205N10LSG

Part Number BSC205N10LSG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Jun 7, 2011
Detailed Description BSC205N10LS G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (...
Datasheet BSC205N10LSG




Overview
BSC205N10LS G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 20.
5 45 V mΩ A com • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type BSC205N10LS G Package PG-TDSON-8 Marking 205N10LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K...






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