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BSC265N10LSFG

Part Number BSC265N10LSFG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Jun 7, 2011
Detailed Description BSC265N10LSF G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Very low gate charge x R DS(on) product (...
Datasheet BSC265N10LSFG




Overview
BSC265N10LSF G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Very low gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID PG-TDSON-8 100 26.
5 40 V mΩ A • Ideal for high-frequency switching and synchronous rectification • Low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • 150 °C operating temperature • Halogen-free according to IEC61249-2-21 www.
DataSheet4U.
com Type BSC265N10LSF G Package PG-TDSON-8 Marking 265N10LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K/W 2...






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