2N5909 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5909 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight tracking is required.
The hermetically sealed TO-78 package is well suited for hi-reliability and harsh environment applications.
(See Packaging Information).
FEATURES  LOW DRIFT  ULTRA LOW LEAKAGE  LOW PINCHOFF  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  | VGS1‐2 / T| = 5µV/°C TYP.
  IG = 150fA TYP.
  Vp = 2V TYP.
  2N5909 Benefits: ƒ ƒ ƒ ƒ Tight Tracking Good matching Ultra Low Leakage Low Drift Maxi...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)