Power
Transistors
2SD1267, 2SD1267A
Silicon
NPN triple diffusion planar type
For power amplification Complementary to 2SB942 and 2SB942A
Unit: mm
0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1 1.
3±0.
2 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 4.
2±0.
2
s Features
q q q
7.
5±0.
2 Solder Dip 4.
0 14.
0±0.
5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1267 2SD1267A 2SD1267 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings 60 80 60 80 5 8 4 40 2 150 –55 to +150 Unit V
emitter voltage 2SD1267A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature...