isc Silicon
PNP Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4466 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA...