isc Silicon
PNP Power
Transistor
2SA1658
DESCRIPTION ·Collector-Emitter Breakdown Voltage
VCEO= -30V(Min) ·Complement to Type 2SC4369 ·Full-mold package that does not require an insulating
board or bushing when mounting.
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5.
0
V
IC
Collector Current-Continuous
-3
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-0.
3
A
15
W
...