isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min) ·High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -1A) ·Low Saturation Voltage-
: VCE(sat)= -0.
3V(Max)@ (IC= -4A, IB= -0.
2A) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Developed for use in switching power supplies, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for highcurrent switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter...