isc Silicon
PNP Power
Transistor
2SA1184
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -120V (Min) ·Complement to Type 2SC2824 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5.
0
V
IC
Collector Current-Continuous
-1
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-0.
1
A
1 W
15
150
℃
Tstg
Storage Te...