isc Silicon
PNP Power
Transistor
2SA1169
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2773 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-15
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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