isc Silicon
PNP Power
Transistor
2SA1166
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency
amplifier output stage
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-15
A
150
W
150
℃
Tstg
Storage Temperature Ran...