isc Silicon
PNP Power
Transistor
2SA1120
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -20V (Min) ·Low Collector Saturation Voltage-
: VCE(sat) = -1.
0V(Max.
)@ IC= 0.
1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Strobo flash applications ·Audio power amplifer applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-35
V
VCEO Collector-Emitter Voltage
-20
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-8
A
IE
Emitter Current-Continuous
5
A
IEM
Emitter Current-Peak
Collector Power Dissipation @Ta=2...