isc Silicon
PNP Power
Transistor
2SA1111
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2591 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency drivers and high power
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5.
0
V
IC
Collector Current-Continuous
-1
A
ICM
Collector Current-Peak
-1.
5
A
PC
Collector Power Dissipation
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperat...