isc Silicon
PNP Power
Transistor
2SA1109
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -180V(Min.
) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency amplifier and high power
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-14
A
200
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
...