isc Silicon
PNP Power
Transistor
2SA1078
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min.
) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2528 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers and drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-2
A
25
W
150
℃
Tstg
Storage Temperature Range
...