isc Silicon
PNP Power
Transistor
2SA1073
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2523 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency power amplifier ·Audio power amplifiers ·Switching
regulators ·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-12
A
120
W
150
℃
...